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Renesas LSIs 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION
The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T320VP are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) .
M5M29GB/T320VP-80
FEATURES
Organization
................................. 2,097,152 word x 16bit ................................. 4,194,304 word x 8 bit
Boot Block M5M29GB320VP M5M29GT320VP
........................Bottom Boot ........................Top Boot
Supply voltage ................................ .............................. VCC = 2.7 ~ 3.6V Access time 90ns (Vcc=2.7~3.6V) Power Dissipation ................................. 72 mW (Max. at 5MHz) Read (After Automatic Power saving) .......... 0.33W (typ.) Program/Erase ................................. 126mW (Max.) ................................. 0.33W (typ.) Standby Deep power down mode ....................... 0.33W (typ.) Auto program for Bank(I) and Bank(II) Program Time ................................. 4ms (typ.) Program Unit (Byte Program) ......................... 1word/1byte (Page Program) ......................... 128word/256byte Auto program for Bank(III) and Bank(IV) Program Time ................................. 4ms (typ.) ................................. 128word/256byte Program Unit Auto Erase ................................. 40 ms (typ.) Erase time Erase Unit Bank(I) Boot Block ..................... 4Kword/8Kbyte x 2 Parameter Block .............. 4Kword/8Kbyte x 6 Main Block ...................... 32Kword/64Kbyte x 7 Bank(II) Main Block ...................... 32Kword/64Kbyte x 8 Bank(III) Main Block ...................... 32Kword/64Kbyte x 24 Bank(IV) Main Block ...................... 32Kword/64Kbyte x 24 Program/Erase cycles ......................................... 100Kcycles
.............................. 80ns (Vcc=3.0~3.6V)
Other Functions Soft Ware Command Control Selective Block Lock Status Register Read Alternating Back Ground Program/Erase Operation Between Bank(I) ,Bank(II),Bank(III) and Bank(IV) Package 48-Lead, 12mm x 20mm TSOP (type-I)
APPLICATION
Code Strage Digital Cellular Phone Telecommunication Mobile Computing Machine PDA (Personal Digital Assistance) Car Navigation System Video Game Machine
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PIN CONFIGURATION (TOP VIEW)
320VP A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RP# NC WP# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38
320VP A16 BYTE# GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# GND CE# A0
M5M29GB/T 320VP
37 36 35 34 33 32 31 30 29 28 27 26 25
NC : NO CONNECTION
Outline 48pin TSOP type-I (12 X 20mm) VP(Normal bend) 1
48P3E-C
Rev3.0_48a_bazz
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Renesas LSIs 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T320VP-80
BLOCK DIAGRAM
128 WORD PAGE BUFFER Main Block 70 32KW
A20 A19 A18 A17 A16 A15 A14 A13 A12 A11
ADDRESS INPUTS
24
Main Block 47 Main Block 46 32KW 32KW
VCC (3.3V) GND (0V)
24
X-DECODER
A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
7
Main Block 8 Parameter Block 7 32KW 4KW 4KW 4KW 4KW Main Block 23 Main Block 22 32KW 32KW
8
Main Block 15 Main Block 14 32KW 32KW
6 2 Boot Block 0
Parameter Block 2 Boot Block 1
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Y-DECODER Y-GATE / SENSE AMP.
STATUS / ID REGISTER
MULTIPLEXER
CHIP ENABLE INPUT OUTPUT ENABLE INPUT WRITE ENABLE INPUT WRITE PROTECT INPUT RESET/POWER DOWN INPUT BYTE ENABLE INPUT READY/BUSY OUTPUT
CE# OE# WE# WP# RP# BYTE# RY/BY#
CUI
WSM INPUT/OUTPUT BUFFERS
DQ15/A-1 DQ14DQ13DQ12
DQ3DQ2DQ1DQ0
DATA INPUTS/OUTPUTS
M5M29GB/T320VP (8/16 bit version)
32M Flash Memory Type name
M 5 M 29G T 320 VP
Operating Voltage : 29G : 2.7 - 3.6V Standard / BGO Type 29V : 2.3 - 2.7V Standard / BGO Type 29W : 1.65 - 2.2V Standard / BGO Type
Boot Block : T : Top Boot B : Bottom Boot Density/Write Protect/ Word Organizetion : 320 : 32M WP1#, x8/x16 Package : VP : 48pin TSOP(I) 12mm x 20mm (Nomal Pinout)
2
Rev3.0_48a_bazz
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Renesas LSIs 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T320VP-80
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Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan
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REJ03C0025 (c) 2003 Renesas Technology Corp. New publication, effective April 2003. Specifications subject to change without notice
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